Jilin Sino-Microelectronics JCS4N65RC
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JCS4N65RC
1604-JCS4N65RC
晶体管 - FET,MOSFET - 单个
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650V 4A 2.1Ω@10V,2A 122W 4V@250uA 1 N-Channel DPAK MOSFETs ROHS
1最小包装量--
JCS4N65RC详情
Jilin Sino-Microelectronics JCS4N65RC重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
650V
Drain Source On Resistance (RDS(on)@Vgs,Id)
2.1Ω@10V,2A
Power Dissipation (Pd)
122W
Gate Threshold Voltage (Vgs(th)@Id)
4V@250uA
Reverse Transfer Capacitance (Crss@Vds)
3.5pF@25V
Input Capacitance (Ciss@Vds)
670pF@25V
Total Gate Charge (Qg@Vgs)
14nC@10V
Package
Tape & Reel (TR)
操作温度
-55℃~+150℃@(Tj)
类型
1 N-Channel
Continuous Drain Current (Id)
4A
JCS4N65RC拓展信息
Jilin Sino-Microelectronics
A Power microelectronics
A Power microelectronics
WPMtek(Wei Pan Microelectronics)
Hangzhou Silan Microelectronics
Hangzhou Silan Microelectronics
Hangzhou Silan Microelectronics
WPMtek(Wei Pan Microelectronics)
WUXI UNIGROUP MICRO
Shandong Jingdao Microelectronics







哦! 它是空的。