参数名
参数值
参数名
参数值
包装/外壳
SOT-323-3
Emitter- Base Voltage VEBO
5 V
Pd - Power Dissipation
200 mW
Transistor Polarity
NPN
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
100 at 1 V, 100 mA
Collector-Emitter Saturation Voltage
700 mV
Unit Weight
0.000176 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Gain Bandwidth Product fT
100 MHz
Manufacturer
Micro Commercial Components (MCC)
Brand
Micro Commercial Components (MCC)
Maximum DC Collector Current
500 mA
DC Current Gain hFE Max
600 at 1 V, 100 mA
RoHS
Details
Collector- Emitter Voltage VCEO Max
45 V
Operating Temperature (Min)
-25 °C
Voltage, Rating
25 V
Operating Temperature (Max)
85 °C
系列
AECQ-HE3
包装
切割胶带
容差
10 %
电容量
100 nF
子类别
Transistors
技术
Si
配置
Single
产品类别
BJTs - Bipolar Transistors
集电极基极电压(VCBO)
50 V
连续集电极电流
500 mA
产品类别
Bipolar Transistors - BJT
宽度
800 µm
高度
800 µm
长度
1.6 mm
无铅
无铅