LAPIS RF4E080BNTR

安装类型

表面贴装

包装/外壳

8-PowerUDFN

供应商器件包装

HUML2020L8

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Continuous Drain (Id) @ 25℃

8A (Ta)

Other Names

RF4E080BNTRCT

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

2W (Ta)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2V @ 250µA

操作温度

150°C (TJ)

系列

-

包装

Cut Tape (CT)

湿度敏感性等级(MSL)

1 (Unlimited)

技术

MOSFET (Metal Oxide)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

17.6 mOhm @ 8A, 10V

输入电容(Ciss)(Max)@Vds

660pF @ 15V

门极电荷(Qg)(最大)@Vgs

14.5nC @ 10V

漏源电压 (Vdss)

30V

Vgs（最大值）

±20V

场效应管特性

-