Littelfuse IXFA26N50P3

包装/外壳

TO-263-3

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.21.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

5

Maximum Continuous Drain Current (A)

26

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (MOhm)

250@10V

Typical Gate Charge @ Vgs (nC)

42@10V

Typical Gate Charge @ 10V (nC)

42

Typical Input Capacitance @ Vds (pF)

2220@25V

Maximum Power Dissipation (mW)

500000

Typical Fall Time (ns)

5

Typical Rise Time (ns)

7

Typical Turn-Off Delay Time (ns)

38

Typical Turn-On Delay Time (ns)

21

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

4.83(Max)

Package Width

9.4(Max)

Package Length

10.41(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-263

Supplier Package

D2PAK

Lead Shape

Gull-wing

Vds - Drain-Source Breakdown Voltage

500 V

Transistor Polarity

N-Channel

Mounting Styles

SMD/SMT

Rds On - Drain-Source Resistance

240 mOhms

Id - Continuous Drain Current

26 A

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N