Littelfuse IXTQ52N30P

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.21.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

300

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

5

Maximum Continuous Drain Current (A)

52

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (mOhm)

73@10V

Typical Gate Charge @ Vgs (nC)

110@10V

Typical Gate Charge @ 10V (nC)

110

Typical Input Capacitance @ Vds (pF)

3490@25V

Maximum Power Dissipation (mW)

400000

Typical Fall Time (ns)

20

Typical Rise Time (ns)

22

Typical Turn-Off Delay Time (ns)

60

Typical Turn-On Delay Time (ns)

24

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Width

4.9(Max)

Package Length

15.8(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-3P

Supplier Package

TO-3P

Lead Shape

通孔

零件状态

活跃

引脚数量

3

配置

Single

信道型

N