Littelfuse IXFA3N120

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.10.00.80

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1200

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

3

Maximum Drain Source Resistance (MOhm)

4500@10V

Typical Gate Charge @ Vgs (nC)

39@10V

Typical Gate Charge @ 10V (nC)

39

Typical Input Capacitance @ Vds (pF)

1050@25V

Maximum Power Dissipation (mW)

200000

Typical Fall Time (ns)

18

Typical Rise Time (ns)

15

Typical Turn-Off Delay Time (ns)

32

Typical Turn-On Delay Time (ns)

17

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

4.83(Max)

Package Width

9.4(Max)

Package Length

10.41(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-263

Supplier Package

D2PAK

Lead Shape

Gull-wing

Continuous Drain Current

3(A)

Drain-Source On-Volt

1200(V)

Operating Temperature Classification

Military

Package Type

D2PAK

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±20(V)

Number of Elements

1

Rad Hardened

无

零件状态

活跃

类型

功率MOSFET

引脚数量

3

极性

N

配置

Single

功率耗散

200(W)

信道型

N