Littelfuse IXFA5N100P-TRL

包装/外壳

TO-263-3

Typical Rise Time (ns)

13

Typical Fall Time (ns)

37

Maximum Power Dissipation (mW)

250000

Typical Input Capacitance @ Vds (pF)

1830@25V

Typical Gate Charge @ 10V (nC)

33.4

Typical Gate Charge @ Vgs (nC)

33.4@10V

Maximum Drain Source Resistance (mOhm)

2800@10V

Maximum Continuous Drain Current (A)

5

Maximum Gate Source Voltage (V)

±30

Maximum Drain Source Voltage (V)

1000

Number of Elements per Chip

1

Channel Mode

Enhancement

Process Technology

HiperFET

Category

功率MOSFET

PPAP

无

Automotive

无

ECCN (US)

EAR99

EU RoHS

Compliant

Package Length

10.41(Max)

Package Width

9.4(Max)

Package Height

4.83(Max)

Mounting

表面贴装

Maximum Operating Temperature (°C)

150

Minimum Operating Temperature (°C)

-55

Typical Turn-On Delay Time (ns)

12

Typical Turn-Off Delay Time (ns)

30

PCB changed

2

Tab

Tab

Standard Package Name

TO-263

Supplier Package

D2PAK

Lead Shape

Gull-wing

Vds - Drain-Source Breakdown Voltage

1 kV

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

250 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

33.4 nC

Rds On - Drain-Source Resistance

2.8 Ohms

Id - Continuous Drain Current

5 A

包装

卷带

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N