Littelfuse IXFB30N120P

EU RoHS

符合免除

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1200

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

30

Maximum Drain Source Resistance (MOhm)

350@10V

Typical Gate Charge @ Vgs (nC)

310@10V

Typical Gate Charge @ 10V (nC)

310

Typical Input Capacitance @ Vds (pF)

22500@25V

Maximum Power Dissipation (mW)

1250000

Typical Fall Time (ns)

56

Typical Rise Time (ns)

60

Typical Turn-Off Delay Time (ns)

95

Typical Turn-On Delay Time (ns)

57

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

26.59(Max)

Package Width

5.31(Max)

Package Length

20.29(Max)

PCB changed

3

Tab

Tab

Supplier Package

PLUS 264

零件状态

活跃

引脚数量

3

配置

Single

信道型

N