Littelfuse IXFB44N100Q3

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1000

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

44

Maximum Drain Source Resistance (mOhm)

220@10V

Typical Gate Charge @ Vgs (nC)

264@10V

Typical Gate Charge @ 10V (nC)

264

Typical Input Capacitance @ Vds (pF)

13600@25V

Maximum Power Dissipation (mW)

1560000

Typical Fall Time (ns)

28

Typical Rise Time (ns)

30

Typical Turn-Off Delay Time (ns)

66

Typical Turn-On Delay Time (ns)

48

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

26.59(Max)

Package Width

5.31(Max)

Package Length

20.29(Max)

PCB changed

3

Tab

Tab

Supplier Package

PLUS 264

Continuous Drain Current

44(A)

Drain-Source On-Volt

1000(V)

Operating Temperature Classification

Military

Package Type

PLUS 264

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±30(V)

Number of Elements

1

Rad Hardened

无

零件状态

活跃

类型

功率MOSFET

引脚数量

3

极性

N

配置

Single

功率耗散

1560(W)

信道型

N