Littelfuse IXFH110N10P

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.10.00.80

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

110

Maximum Drain Source Resistance (mOhm)

15@10V

Typical Gate Charge @ Vgs (nC)

110@10V

Typical Gate Charge @ 10V (nC)

110

Typical Input Capacitance @ Vds (pF)

3550@25V

Maximum Power Dissipation (mW)

480000

Typical Fall Time (ns)

25

Typical Rise Time (ns)

25

Typical Turn-Off Delay Time (ns)

65

Typical Turn-On Delay Time (ns)

21

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

通孔

Package Height

21.45(Max)

Package Width

5.3(Max)

Package Length

16.24(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-247

Supplier Package

TO-247AD

Lead Shape

通孔

Continuous Drain Current

110(A)

Drain-Source On-Volt

100(V)

Operating Temperature Classification

Military

Package Type

TO-247AD

Operating Temp Range

-55C to 175C

Gate-Source Voltage (Max)

±20(V)

Number of Elements

1

Rad Hardened

无

零件状态

活跃

类型

功率MOSFET

引脚数量

3

极性

N

配置

Single

功率耗散

480(W)

信道型

N