Littelfuse IXFH150N15P

Channel Mode

Enhancement

Process Technology

HiperFET

Category

功率MOSFET

PPAP

无

Automotive

无

SVHC Exceeds Threshold

有

SVHC

有

HTS

8541.29.00.95

ECCN (US)

EAR99

EU RoHS

符合免除

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

150

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

150

Maximum Drain Source Resistance (MOhm)

13@10V

Typical Gate Charge @ Vgs (nC)

190@10V

Typical Gate Charge @ 10V (nC)

190

Typical Input Capacitance @ Vds (pF)

5800@25V

Maximum Power Dissipation (mW)

714000

Typical Fall Time (ns)

28

Typical Rise Time (ns)

33

Typical Turn-Off Delay Time (ns)

100

Typical Turn-On Delay Time (ns)

30

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

通孔

Package Height

21.46(Max)

Package Width

5.3(Max)

Package Length

16.26(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-247

Continuous Drain Current

150(A)

Drain-Source On-Volt

150(V)

Operating Temperature Classification

Military

Package Type

TO-247

Operating Temp Range

-55C to 175C

Gate-Source Voltage (Max)

±20(V)

Number of Elements

1

Rad Hardened

无

零件状态

活跃

类型

功率MOSFET

引脚数量

3

极性

N

配置

Single

功率耗散

714(W)

信道型

N