Littelfuse IXFH26N50

材料

Si

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.21.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HDMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

26

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

200

Maximum Drain Source Resistance (MOhm)

200@10V

Typical Gate Charge @ Vgs (nC)

135@10V

Typical Gate Charge @ 10V (nC)

135

Typical Input Capacitance @ Vds (pF)

4200@25V

Maximum Power Dissipation (mW)

300000

Typical Fall Time (ns)

30

Typical Rise Time (ns)

33

Typical Turn-Off Delay Time (ns)

65

Typical Turn-On Delay Time (ns)

16

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

21.46(Max)

Package Width

5.3(Max)

Package Length

16.26(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-247AD

零件状态

NRND

引脚数量

3

配置

Single

信道型

N