Littelfuse IXFH42N50P2

包装/外壳

TO-247-3

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

42

Maximum Drain Source Resistance (MOhm)

145@10V

Typical Gate Charge @ Vgs (nC)

92@10V

Typical Gate Charge @ 10V (nC)

92

Typical Input Capacitance @ Vds (pF)

5300@25V

Maximum Power Dissipation (mW)

830000

Typical Fall Time (ns)

9

Typical Rise Time (ns)

12

Typical Turn-Off Delay Time (ns)

42

Typical Turn-On Delay Time (ns)

23

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

21.46(Max)

Package Width

5.3(Max)

Package Length

16.26(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-247

Vds - Drain-Source Breakdown Voltage

500 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

830 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Qg - Gate Charge

92 nC

Rds On - Drain-Source Resistance

145 mOhms

Id - Continuous Drain Current

42 A

零件状态

活跃

技术

Si

引脚数量

3

配置

单排双泄

通道数量

1 Channel

信道型

N