Littelfuse IXFH52N30P

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

300

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

5

Maximum Continuous Drain Current (A)

52

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (MOhm)

73@10V

Typical Gate Charge @ Vgs (nC)

110@10V

Typical Gate Charge @ 10V (nC)

110

Typical Input Capacitance @ Vds (pF)

3490@25V

Maximum Power Dissipation (mW)

400000

Typical Fall Time (ns)

20

Typical Rise Time (ns)

22

Typical Turn-Off Delay Time (ns)

60

Typical Turn-On Delay Time (ns)

24

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

21.46(Max)

Package Width

5.3(Max)

Package Length

16.26(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-247

零件状态

活跃

引脚数量

3

配置

Single

信道型

N