Littelfuse IXFH6N120

材料

Si

Typical Gate Charge @ Vgs (nC)

56@10V

Typical Gate Charge @ 10V (nC)

56

Typical Input Capacitance @ Vds (pF)

1950@25V

Maximum Power Dissipation (mW)

300000

Typical Fall Time (ns)

18

Typical Rise Time (ns)

33

Typical Turn-Off Delay Time (ns)

42

Typical Turn-On Delay Time (ns)

28

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

21.46(Max)

Package Width

5.3(Max)

Package Length

16.26(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-247AD

Maximum Drain Source Resistance (MOhm)

2600@10V

Maximum Continuous Drain Current (A)

6

Maximum Gate Source Voltage (V)

±20

Maximum Drain Source Voltage (V)

1200

Number of Elements per Chip

1

Channel Mode

Enhancement

Process Technology

HiperFET

Category

功率MOSFET

PPAP

无

Automotive

无

SVHC Exceeds Threshold

有

SVHC

有

EU RoHS

符合免除

零件状态

NRND

引脚数量

3

配置

Single

信道型

N