Littelfuse IXFK120N30T

EU RoHS

符合免除

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

GigaMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

300

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

5

Maximum Continuous Drain Current (A)

120

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

50

Maximum Drain Source Resistance (mOhm)

24@10V

Typical Gate Charge @ Vgs (nC)

265@10V

Typical Gate Charge @ 10V (nC)

265

Typical Input Capacitance @ Vds (pF)

20000@25V

Maximum Power Dissipation (mW)

960000

Typical Fall Time (ns)

23

Typical Rise Time (ns)

31

Typical Turn-Off Delay Time (ns)

87

Typical Turn-On Delay Time (ns)

32

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

26.16(Max)

Package Width

5.13(Max)

Package Length

19.96(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-264

零件状态

活跃

引脚数量

3

配置

Single

信道型

N