Littelfuse IXFK34N80

包装/外壳

TO-264-3

材料

Si

EU RoHS

Compliant

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

800

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

34

Maximum Drain Source Resistance (mOhm)

240@10V

Typical Gate Charge @ Vgs (nC)

270@10V

Typical Gate Charge @ 10V (nC)

270

Typical Input Capacitance @ Vds (pF)

7500@25V

Maximum Power Dissipation (mW)

560000

Typical Fall Time (ns)

40

Typical Rise Time (ns)

45

Typical Turn-Off Delay Time (ns)

100

Typical Turn-On Delay Time (ns)

45

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

26.16(Max)

Package Width

5.13(Max)

Package Length

19.96(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-264AA

Vds - Drain-Source Breakdown Voltage

800 V

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

560 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Qg - Gate Charge

270 nC

Rds On - Drain-Source Resistance

240 mOhms

Id - Continuous Drain Current

34 A

零件状态

NRND

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N