Littelfuse IXFK520N075T2

包装/外壳

TO-264-3

EU RoHS

符合免除

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

75

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

520

Maximum Drain Source Resistance (MOhm)

2.2@10V

Typical Gate Charge @ Vgs (nC)

545@10V

Typical Gate Charge @ 10V (nC)

545

Typical Input Capacitance @ Vds (pF)

41000@25V

Maximum Power Dissipation (mW)

1250000

Typical Fall Time (ns)

35

Typical Rise Time (ns)

36

Typical Turn-Off Delay Time (ns)

80

Typical Turn-On Delay Time (ns)

48

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

通孔

Package Height

26.16(Max)

Package Width

5.13(Max)

Package Length

19.96(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-264

MSL

-

Qualification

-

Continuous Drain Current Id

520A

Id - Continuous Drain Current

520 A

Rds On - Drain-Source Resistance

2.2 mOhms

Qg - Gate Charge

545 nC

Mounting Styles

通孔

Minimum Operating Temperature

- 55 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Maximum Operating Temperature

+ 175 C

Transistor Polarity

N-Channel

Pd - Power Dissipation

1.25 kW

Vgs th - Gate-Source Threshold Voltage

5 V

Vds - Drain-Source Breakdown Voltage

75 V

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

功率耗散

1.25kW

信道型

N