Littelfuse IXFK64N60Q3

包装/外壳

TO-264-3

EU RoHS

符合免除

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

600

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

64

Maximum Drain Source Resistance (mOhm)

95@10V

Typical Gate Charge @ Vgs (nC)

190@10V

Typical Gate Charge @ 10V (nC)

190

Typical Input Capacitance @ Vds (pF)

9930@25V

Maximum Power Dissipation (mW)

1250000

Typical Fall Time (ns)

11

Typical Rise Time (ns)

15

Typical Turn-Off Delay Time (ns)

50

Typical Turn-On Delay Time (ns)

45

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

26.16(Max)

Package Width

5.13(Max)

Package Length

19.96(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-264

Vds - Drain-Source Breakdown Voltage

600 V

Pd - Power Dissipation

1.25 kW

Transistor Polarity

N-Channel

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Mounting Styles

通孔

Qg - Gate Charge

190 nC

Rds On - Drain-Source Resistance

95 mOhms

Id - Continuous Drain Current

64 A

系列

IXFK64N60

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N