Littelfuse IXFK80N50P

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

80

Maximum Drain Source Resistance (MOhm)

65@10V

Typical Gate Charge @ Vgs (nC)

197@10V

Typical Gate Charge @ 10V (nC)

197

Typical Input Capacitance @ Vds (pF)

12700@25V

Maximum Power Dissipation (mW)

1040000

Typical Fall Time (ns)

16

Typical Rise Time (ns)

27

Typical Turn-Off Delay Time (ns)

70

Typical Turn-On Delay Time (ns)

25

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

26.16(Max)

Package Width

5.13(Max)

Package Length

19.96(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-264

零件状态

活跃

引脚数量

3

配置

Single

信道型

N