Littelfuse IXFK80N50Q3

EU RoHS

符合免除

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

80

Maximum Drain Source Resistance (mOhm)

65@10V

Typical Gate Charge @ Vgs (nC)

200@10V

Typical Gate Charge @ 10V (nC)

200

Typical Input Capacitance @ Vds (pF)

10000@25V

Maximum Power Dissipation (mW)

1250000

Supplier Package

TO-264

Tab

Tab

PCB changed

3

Package Length

19.96(Max)

Package Width

5.13(Max)

Package Height

26.16(Max)

Mounting

通孔

Maximum Operating Temperature (°C)

150

Minimum Operating Temperature (°C)

-55

Typical Turn-On Delay Time (ns)

30

Typical Turn-Off Delay Time (ns)

43

Typical Rise Time (ns)

20

Typical Fall Time (ns)

15

零件状态

活跃

引脚数量

3

配置

Single

信道型

N