Littelfuse IXFL38N100P

包装/外壳

TO-264-3

材料

Si

EU RoHS

Compliant

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1000

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

29

Maximum Drain Source Resistance (MOhm)

230@10V

Typical Gate Charge @ Vgs (nC)

350@10V

Typical Gate Charge @ 10V (nC)

350

Typical Input Capacitance @ Vds (pF)

24000@25V

Maximum Power Dissipation (mW)

520000

Typical Fall Time (ns)

40

Typical Rise Time (ns)

55

Typical Turn-Off Delay Time (ns)

71

Typical Turn-On Delay Time (ns)

74

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

26.42(Max)

Package Width

5.21(Max)

Package Length

20.29(Max)

PCB changed

3

Tab

Tab

Supplier Package

ISOPLUS I5-PAK

Vds - Drain-Source Breakdown Voltage

1 kV

Vgs th - Gate-Source Threshold Voltage

3.5 V

Pd - Power Dissipation

520 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Qg - Gate Charge

350 nC

Rds On - Drain-Source Resistance

230 mOhms

Id - Continuous Drain Current

29 A

系列

IXFL38N100

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N