Littelfuse IXFN170N65X2

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

650

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

5

Operating Junction Temperature (°C)

-55 to 150

Maximum Continuous Drain Current (A)

170

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

50

Maximum Drain Source Resistance (MOhm)

13@10V

Typical Gate Charge @ Vgs (nC)

434@10V

Typical Gate Charge @ 10V (nC)

434

Typical Gate to Drain Charge (nC)

137@10V

Typical Gate to Source Charge (nC)

166

Typical Reverse Recovery Charge (nC)

3100

Typical Input Capacitance @ Vds (pF)

27000@25V

Typical Reverse Transfer Capacitance @ Vds (pF)

12400@25V

Minimum Gate Threshold Voltage (V)

3.5

Typical Output Capacitance (pF)

15.8

Maximum Power Dissipation (mW)

1170000

Typical Fall Time (ns)

6

Typical Rise Time (ns)

15

Typical Turn-Off Delay Time (ns)

133

Typical Turn-On Delay Time (ns)

60

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Maximum Positive Gate Source Voltage (V)

30

Maximum Pulsed Drain Current @ TC=25°C (A)

340

Typical Gate Plateau Voltage (V)

6.9

Typical Reverse Recovery Time (ns)

270

Maximum Diode Forward Voltage (V)

1.4

Mounting

Screw

Package Height

9.6(Max)

Package Width

25.42(Max)

Package Length

38.23(Max)

PCB changed

4

Standard Package Name

SOT

Supplier Package

SOT-227B

Lead Shape

Screw

Qualification

-

Continuous Drain Current Id

170A

零件状态

活跃

引脚数量

4

配置

单双源

功率耗散

1.17kW

信道型

N