Littelfuse IXFN180N20

材料

Si

EU RoHS

符合免除

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

180

Maximum Drain Source Resistance (MOhm)

12.5@10V

Typical Gate Charge @ Vgs (nC)

660@10V

Typical Gate Charge @ 10V (nC)

660

Typical Input Capacitance @ Vds (pF)

22000@25V

Maximum Power Dissipation (mW)

700000

Typical Fall Time (ns)

56

Typical Rise Time (ns)

85

Typical Turn-Off Delay Time (ns)

180

Typical Turn-On Delay Time (ns)

55

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

Screw

Package Width

25.42(Max)

Package Length

38.23(Max)

PCB changed

4

Supplier Package

SOT-227B

零件状态

NRND

引脚数量

4

配置

单双源

信道型

N