Littelfuse IXFN20N120P

包装/外壳

SOT-227-4

EU RoHS

符合免除

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1200

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

20

Maximum Drain Source Resistance (MOhm)

570@10V

Typical Gate Charge @ Vgs (nC)

193@10V

Typical Gate Charge @ 10V (nC)

193

Typical Input Capacitance @ Vds (pF)

11100@25V

Maximum Power Dissipation (mW)

595000

Typical Fall Time (ns)

70

Typical Rise Time (ns)

45

Typical Turn-Off Delay Time (ns)

72

Typical Turn-On Delay Time (ns)

49

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

Screw

Package Width

25.42(Max)

Package Length

38.23(Max)

PCB changed

4

Supplier Package

SOT-227B

Typical Turn-On Delay Time

49 ns

Pd - Power Dissipation

595 W

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

底座安装

Rds On - Drain-Source Resistance

570 mOhms

Typical Turn-Off Delay Time

72 ns

系列

IXFN20N120

零件状态

活跃

类型

Polar Power MOSFET HiPerFET

子类别

Discrete Semiconductor Modules

技术

Si

引脚数量

4

配置

单双源

上升时间

45 ns

产品类别

Discrete Semiconductor Modules

信道型

N