Littelfuse IXFN32N100Q3

EU RoHS

符合免除

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1000

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

6.5

Maximum Continuous Drain Current (A)

28

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

50

Maximum Drain Source Resistance (mOhm)

320@10V

Typical Gate Charge @ Vgs (nC)

195@10V

Typical Gate Charge @ 10V (nC)

195

Typical Input Capacitance @ Vds (pF)

9940@25V

Maximum Power Dissipation (mW)

780000

Typical Fall Time (ns)

12

Typical Rise Time (ns)

15

Typical Turn-Off Delay Time (ns)

54

Typical Turn-On Delay Time (ns)

45

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

Screw

Package Width

25.42(Max)

Package Length

38.23(Max)

PCB changed

4

Supplier Package

SOT-227B

零件状态

活跃

引脚数量

4

配置

单双源

信道型

N