Littelfuse IXFN70N120SK

包装/外壳

SOT-227-4

材料

SiC

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1200

Maximum Gate Source Voltage (V)

25

Maximum Continuous Drain Current (A)

68

Maximum Drain Source Resistance (MOhm)

34@20V

Typical Gate Charge @ Vgs (nC)

161@20V

Typical Input Capacitance @ Vds (pF)

2790@1000V

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

150

Mounting

Screw

Package Width

25.42(Max)

Package Length

38.23(Max)

PCB changed

4

Supplier Package

SOT-227B

Pd - Power Dissipation

-

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 40 C

Mounting Styles

螺钉安装

Rds On - Drain-Source Resistance

25 mOhms

包装

Tube

类型

HiperFET

子类别

Discrete Semiconductor Modules

技术

SiC

引脚数量

4

配置

单双源

产品类别

Discrete Semiconductor Modules

信道型

N

产品

功率MOSFET模块