Littelfuse IXFN82N60P

材料

Si

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

600

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

5

Maximum Continuous Drain Current (A)

72

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

50

Maximum Drain Source Resistance (MOhm)

75@10V

Typical Gate Charge @ Vgs (nC)

240@10V

Typical Gate Charge @ 10V (nC)

240

Typical Input Capacitance @ Vds (pF)

23000@25V

Maximum Power Dissipation (mW)

1040000

Typical Fall Time (ns)

24

Typical Rise Time (ns)

23

Typical Turn-Off Delay Time (ns)

79

Typical Turn-On Delay Time (ns)

28

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

Screw

Package Height

9.6(Max)

Package Width

25.42(Max)

Package Length

38.23(Max)

PCB changed

4

Standard Package Name

SOT

Supplier Package

SOT-227B

Lead Shape

Screw

零件状态

活跃

引脚数量

4

配置

单双源

信道型

N