Littelfuse IXFP56N30X3

包装/外壳

TO-220-3

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

300

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

56

Maximum Drain Source Resistance (MOhm)

27@10V

Typical Gate Charge @ Vgs (nC)

56@10V

Typical Gate Charge @ 10V (nC)

56

Typical Input Capacitance @ Vds (pF)

3750@25V

Maximum Power Dissipation (mW)

320000

Typical Fall Time (ns)

10

Typical Rise Time (ns)

26

Typical Turn-Off Delay Time (ns)

64

Typical Turn-On Delay Time (ns)

21

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

9.15(Max)

Package Width

4.83(Max)

Package Length

10.66(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-220AB

Vds - Drain-Source Breakdown Voltage

300 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

320 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Qg - Gate Charge

56 nC

Rds On - Drain-Source Resistance

27 mOhms

Id - Continuous Drain Current

56 A

系列

HiPerFET

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N