Littelfuse IXFP90N20X3

包装/外壳

TO-220-3

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

90

Maximum Drain Source Resistance (MOhm)

12.8@10V

Typical Gate Charge @ Vgs (nC)

78@10V

Typical Gate Charge @ 10V (nC)

78

Typical Input Capacitance @ Vds (pF)

5420@25V

Maximum Power Dissipation (mW)

390000

Typical Fall Time (ns)

13

Typical Rise Time (ns)

26

Typical Turn-Off Delay Time (ns)

62

Typical Turn-On Delay Time (ns)

22

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

9.15(Max)

Package Width

4.83(Max)

Package Length

10.66(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-220AB

Continuous Drain Current Id

90A

Qualification

-

Vds - Drain-Source Breakdown Voltage

200 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

390 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Qg - Gate Charge

78 nC

Rds On - Drain-Source Resistance

12.8 mOhms

Id - Continuous Drain Current

90 A

系列

IXFP10N60

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

功率耗散

390W

信道型

N