Littelfuse IXFQ34N50P3

EU RoHS

符合免除

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

5

Maximum Continuous Drain Current (A)

34

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

50

Maximum Drain Source Resistance (mOhm)

180@10V

Typical Gate Charge @ Vgs (nC)

60@10V

Typical Gate Charge @ 10V (nC)

60

Typical Input Capacitance @ Vds (pF)

3260@25V

Maximum Power Dissipation (mW)

695000

Typical Fall Time (ns)

9

Typical Rise Time (ns)

57

Typical Turn-Off Delay Time (ns)

40

Typical Turn-On Delay Time (ns)

23

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Width

4.9(Max)

Package Length

15.8(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-3P

零件状态

活跃

引脚数量

3

配置

Single

信道型

N