Littelfuse IXFQ50N60P3

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

Polar3 HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

600

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

50

Maximum Drain Source Resistance (mOhm)

160@10V

Typical Gate Charge @ Vgs (nC)

94@10V

Typical Gate Charge @ 10V (nC)

94

Typical Input Capacitance @ Vds (pF)

6300@25V

Maximum Power Dissipation (mW)

1040000

Typical Fall Time (ns)

17

Typical Rise Time (ns)

20

Typical Turn-Off Delay Time (ns)

62

Typical Turn-On Delay Time (ns)

31

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Width

4.9(Max)

Package Length

15.8(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-3P

零件状态

活跃

引脚数量

3

配置

Single

信道型

N