Littelfuse IXFQ60N50P3
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IXFQ60N50P3
1475-IXFQ60N50P3
晶体管 - FET,MOSFET - 阵列
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IXFQ60N50P3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Littelfuse stock available at utmel
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IXFQ60N50P3详情
Littelfuse IXFQ60N50P3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
EU RoHS
符合免除
ECCN (US)
EAR99
Automotive
无
PPAP
无
Category
功率MOSFET
Process Technology
Polar3 HiperFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
500
Maximum Gate Source Voltage (V)
±30
Maximum Continuous Drain Current (A)
60
Maximum Drain Source Resistance (MOhm)
110@10V
Typical Gate Charge @ Vgs (nC)
96@10V
Typical Gate Charge @ 10V (nC)
96
Typical Input Capacitance @ Vds (pF)
6250@25V
Maximum Power Dissipation (mW)
1040000
Typical Fall Time (ns)
8
Typical Rise Time (ns)
16
Typical Turn-Off Delay Time (ns)
37
Typical Turn-On Delay Time (ns)
18
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
通孔
Package Width
4.9(Max)
Package Length
15.8(Max)
PCB changed
3
Tab
Tab
Supplier Package
TO-3P
Qualification
-
Continuous Drain Current Id
60A
零件状态
活跃
引脚数量
3
配置
Single
功率耗散
1.04kW
信道型
N
IXFQ60N50P3拓展信息
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