Littelfuse IXFR32N100Q3

EU RoHS

符合免除

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1000

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

6.5

Maximum Continuous Drain Current (A)

23

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

50

Maximum Drain Source Resistance (mOhm)

350@10V

Typical Gate Charge @ Vgs (nC)

195@10V

Typical Gate Charge @ 10V (nC)

195

Typical Input Capacitance @ Vds (pF)

10900@25V

Maximum Power Dissipation (mW)

570000

Typical Fall Time (ns)

12

Typical Rise Time (ns)

15

Typical Turn-Off Delay Time (ns)

54

Typical Turn-On Delay Time (ns)

45

Minimum Operating Temperature (°C)

-55

Supplier Package

ISOPLUS 247

Tab

Tab

PCB changed

3

Package Length

16.13(Max)

Package Width

5.21(Max)

Package Height

21.34(Max)

Mounting

通孔

Maximum Operating Temperature (°C)

150

零件状态

活跃

引脚数量

3

配置

Single

信道型

N