Littelfuse IXFT140N10PTRL

包装/外壳

TO-268-3

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

140

Maximum Drain Source Resistance (MOhm)

11@10V

Typical Gate Charge @ Vgs (nC)

155@10V

Typical Gate Charge @ 10V (nC)

155

Typical Input Capacitance @ Vds (pF)

4700@25V

Maximum Power Dissipation (mW)

600000

Typical Fall Time (ns)

26

Typical Rise Time (ns)

50

Typical Turn-Off Delay Time (ns)

85

Typical Turn-On Delay Time (ns)

35

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

5.1(Max)

Package Width

14(Max)

Package Length

16.05(Max)

PCB changed

2

Tab

Tab

Supplier Package

TO-268

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

600 W

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Mounting Styles

通孔

Qg - Gate Charge

155 nC

Rds On - Drain-Source Resistance

11 mOhms

Id - Continuous Drain Current

140 A

包装

卷带

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N