Littelfuse IXFT150N25X3HV

包装/外壳

TO-268HV-3

EU RoHS

符合免除

ECCN (US)

EAR99

SVHC

有

SVHC Exceeds Threshold

有

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

250

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

150

Maximum Drain Source Resistance (MOhm)

9@10V

Typical Gate Charge @ Vgs (nC)

154@10V

Typical Gate Charge @ 10V (nC)

154

Typical Input Capacitance @ Vds (pF)

10400@25V

Maximum Power Dissipation (mW)

735000

Typical Fall Time (ns)

10

Typical Rise Time (ns)

30

Typical Turn-Off Delay Time (ns)

115

Typical Turn-On Delay Time (ns)

30

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Id - Continuous Drain Current

150 A

Rds On - Drain-Source Resistance

9 mOhms

Qg - Gate Charge

154 nC

Mounting Styles

通孔

Vgs - Gate-Source Voltage

- 10 V, + 10 V

Transistor Polarity

N-Channel

Pd - Power Dissipation

735 W

Vgs th - Gate-Source Threshold Voltage

2.5 V

Vds - Drain-Source Breakdown Voltage

250 V

零件状态

活跃

技术

Si

配置

Single

通道数量

1 Channel

信道型

N