Littelfuse IXFT15N100Q3-TRL

包装/外壳

TO-268-3

EU RoHS

符合免除

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1000

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

15

Maximum Drain Source Resistance (mOhm)

1050@10V

Typical Gate Charge @ Vgs (nC)

64@10V

Typical Gate Charge @ 10V (nC)

64

Typical Input Capacitance @ Vds (pF)

3250@25V

Maximum Power Dissipation (mW)

690000

Typical Fall Time (ns)

8

Typical Rise Time (ns)

10

Typical Turn-Off Delay Time (ns)

30

Typical Turn-On Delay Time (ns)

28

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

5.1(Max)

Package Width

14(Max)

Package Length

16.05(Max)

PCB changed

2

Tab

Tab

Supplier Package

TO-268

Vds - Drain-Source Breakdown Voltage

1 kV

Vgs th - Gate-Source Threshold Voltage

3.5 V

Pd - Power Dissipation

690 W

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Mounting Styles

SMD/SMT

Qg - Gate Charge

64 nC

Rds On - Drain-Source Resistance

1.05 Ohms

Id - Continuous Drain Current

15 A

包装

卷带

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N