Littelfuse IXFT30N50Q3

包装/外壳

TO-268-3

EU RoHS

符合免除

ECCN (US)

EAR99

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Supplier Package

TO-268

Tab

Tab

PCB changed

2

Package Length

16.05(Max)

Package Width

14(Max)

Package Height

5.1(Max)

Mounting

表面贴装

Maximum Operating Temperature (°C)

150

Minimum Operating Temperature (°C)

-55

Typical Turn-On Delay Time (ns)

14

Typical Turn-Off Delay Time (ns)

26

Typical Rise Time (ns)

14

Typical Fall Time (ns)

9

Maximum Power Dissipation (mW)

690000

Typical Input Capacitance @ Vds (pF)

3200@25V

Typical Gate Charge @ 10V (nC)

62

Typical Gate Charge @ Vgs (nC)

62@10V

Maximum Drain Source Resistance (MOhm)

200@10V

Maximum Continuous Drain Current (A)

30

Maximum Gate Source Voltage (V)

±20

Maximum Drain Source Voltage (V)

500

Number of Elements per Chip

1

Channel Mode

Enhancement

Category

功率MOSFET

Vds - Drain-Source Breakdown Voltage

500 V

Vgs th - Gate-Source Threshold Voltage

3.5 V

Pd - Power Dissipation

690 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

62 nC

Rds On - Drain-Source Resistance

200 mOhms

Id - Continuous Drain Current

30 A

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N