Littelfuse IXFT58N20

包装/外壳

TO-268-3

EU RoHS

符合免除

ECCN (US)

EAR99

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

58

Maximum Drain Source Resistance (MOhm)

40@10V

Typical Gate Charge @ Vgs (nC)

190@10V

Typical Gate Charge @ 10V (nC)

190

Typical Input Capacitance @ Vds (pF)

4400@25V

Maximum Power Dissipation (mW)

300000

Typical Fall Time (ns)

16

Typical Rise Time (ns)

15

Typical Turn-Off Delay Time (ns)

72

Typical Turn-On Delay Time (ns)

18

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

5.1(Max)

Package Width

14(Max)

Package Length

16.05(Max)

PCB changed

2

Tab

Tab

Supplier Package

TO-268

Vds - Drain-Source Breakdown Voltage

200 V

Pd - Power Dissipation

300 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Rds On - Drain-Source Resistance

40 mOhms

Id - Continuous Drain Current

58 A

系列

HiPerFET

零件状态

NRND

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N