Littelfuse IXFT88N30P-TRL

包装/外壳

TO-268-3

EU RoHS

符合免除

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

极性HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

300

Supplier Package

TO-268

Tab

Tab

PCB changed

2

Package Length

16.05(Max)

Package Width

14(Max)

Package Height

5.1(Max)

Mounting

表面贴装

Maximum Operating Temperature (°C)

150

Minimum Operating Temperature (°C)

-55

Typical Turn-On Delay Time (ns)

25

Typical Turn-Off Delay Time (ns)

96

Typical Rise Time (ns)

24

Typical Fall Time (ns)

25

Maximum Power Dissipation (mW)

600000

Typical Input Capacitance @ Vds (pF)

6300@25V

Typical Gate Charge @ 10V (nC)

180

Typical Gate Charge @ Vgs (nC)

180@10V

Maximum Drain Source Resistance (mOhm)

40@10V

Maximum IDSS (uA)

25

Maximum Gate Source Leakage Current (nA)

100

Maximum Continuous Drain Current (A)

88

Maximum Gate Threshold Voltage (V)

5

Maximum Gate Source Voltage (V)

±20

Vds - Drain-Source Breakdown Voltage

300 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

600 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

180 nC

Rds On - Drain-Source Resistance

40 mOhms

Id - Continuous Drain Current

88 A

包装

卷带

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N