Littelfuse IXFT94N30P3

包装/外壳

TO-268-3

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

300

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

5

Maximum Continuous Drain Current (A)

94

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (MOhm)

36@10V

Typical Gate Charge @ Vgs (nC)

102@10V

Typical Gate Charge @ 10V (nC)

102

Typical Input Capacitance @ Vds (pF)

5510@25V

Maximum Power Dissipation (mW)

1040000

Typical Fall Time (ns)

11

Typical Rise Time (ns)

19

Typical Turn-Off Delay Time (ns)

49

Typical Turn-On Delay Time (ns)

23

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

5.1(Max)

Package Width

14(Max)

Package Length

16.05(Max)

PCB changed

2

Tab

Tab

Supplier Package

TO-268AA

Vds - Drain-Source Breakdown Voltage

300 V

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

1.04 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

102 nC

Rds On - Drain-Source Resistance

36 mOhms

Id - Continuous Drain Current

94 A

系列

IXFT94N30

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N