Littelfuse IXFX50N50

包装/外壳

TO-247-3

材料

Si

EU RoHS

符合免除

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

50

Maximum Drain Source Resistance (MOhm)

100@10V

Typical Gate Charge @ Vgs (nC)

330@10V

Typical Gate Charge @ 10V (nC)

330

Typical Input Capacitance @ Vds (pF)

9400@25V

Maximum Power Dissipation (mW)

520000

Typical Fall Time (ns)

45

Typical Rise Time (ns)

60

Typical Turn-Off Delay Time (ns)

120

Typical Turn-On Delay Time (ns)

45

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

21.34(Max)

Package Width

5.21(Max)

Package Length

16.13(Max)

PCB changed

3

Tab

Tab

Supplier Package

PLUS 247

Vds - Drain-Source Breakdown Voltage

500 V

Pd - Power Dissipation

520 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Rds On - Drain-Source Resistance

100 mOhms

Id - Continuous Drain Current

50 A

系列

HiPerFET

零件状态

NRND

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N