Littelfuse IXFY30N25X3

包装/外壳

TO-252-3

EU RoHS

Compliant

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

250

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

30

Maximum Drain Source Resistance (MOhm)

60@10V

Typical Gate Charge @ Vgs (nC)

21@10V

Typical Gate Charge @ 10V (nC)

21

Typical Input Capacitance @ Vds (pF)

1450@25V

Maximum Power Dissipation (mW)

170000

Typical Fall Time (ns)

20

Typical Rise Time (ns)

24

Typical Turn-Off Delay Time (ns)

77

Typical Turn-On Delay Time (ns)

16

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

2.38(Max)

Package Width

6.22(Max)

Package Length

6.73(Max)

PCB changed

2

Tab

Tab

Supplier Package

DPAK

Qualification

-

Continuous Drain Current Id

30A

Vds - Drain-Source Breakdown Voltage

250 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

170 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

21 nC

Rds On - Drain-Source Resistance

60 mOhms

Id - Continuous Drain Current

30 A

系列

HiPerFET

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

功率耗散

170W

信道型

N