Littelfuse IXFY36N20X3

包装/外壳

TO-252-3

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

36

Maximum Drain Source Resistance (MOhm)

45@10V

Typical Gate Charge @ Vgs (nC)

21@10V

Typical Gate Charge @ 10V (nC)

21

Typical Input Capacitance @ Vds (pF)

1425@25V

Maximum Power Dissipation (mW)

170000

Typical Fall Time (ns)

20

Typical Rise Time (ns)

30

Typical Turn-Off Delay Time (ns)

54

Typical Turn-On Delay Time (ns)

19

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

2.38(Max)

Package Width

6.22(Max)

Package Length

6.73(Max)

PCB changed

2

Tab

Tab

Supplier Package

TO-252AA

Qualification

-

Continuous Drain Current Id

36A

Vds - Drain-Source Breakdown Voltage

200 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

170 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

21 nC

Rds On - Drain-Source Resistance

38 mOhms

Id - Continuous Drain Current

36 A

系列

HiPerFET

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

功率耗散

170W

信道型

N