Littelfuse IXFZ520N075T2

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

75

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

465

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

10

Maximum Drain Source Resistance (MOhm)

1.3@10V

Typical Gate Charge @ Vgs (nC)

545@10V

Typical Gate Charge @ 10V (nC)

545

Typical Input Capacitance @ Vds (pF)

41000@25V

Maximum Power Dissipation (mW)

600000

Typical Fall Time (ns)

35

Typical Rise Time (ns)

36

Typical Turn-Off Delay Time (ns)

80

Typical Turn-On Delay Time (ns)

48

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

3.18

Package Width

23.11

Package Length

21.08

PCB changed

6

Supplier Package

Case DE-475

零件状态

活跃

引脚数量

6

配置

Single

信道型

N