Littelfuse IXTA02N250HV-TRL
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IXTA02N250HV-TRL
1475-IXTA02N250HV-TRL
晶体管 - FET,MOSFET - 阵列
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IXTA02N250HV-TRL datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Littelfuse stock available at utmel
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IXTA02N250HV-TRL详情
Littelfuse IXTA02N250HV-TRL重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
EU RoHS
Compliant
ECCN (US)
EAR99
HTS
8541.29.00.95
Automotive
无
PPAP
无
Category
功率MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
2500
Maximum Gate Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
4.5
Operating Junction Temperature (°C)
150
Maximum Continuous Drain Current (A)
0.2
Maximum Gate Source Leakage Current (nA)
100
Maximum IDSS (uA)
5
Maximum Drain Source Resistance (MOhm)
450000@10V
Typical Gate Charge @ Vgs (nC)
7.4@10V
Typical Gate Charge @ 10V (nC)
7.4
Typical Gate to Drain Charge (nC)
5.3
Typical Gate to Source Charge (nC)
0.7
Typical Input Capacitance @ Vds (pF)
116@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
3@25V
Minimum Gate Threshold Voltage (V)
2.5
Typical Output Capacitance (pF)
8
Maximum Power Dissipation (mW)
83000
Typical Fall Time (ns)
33
Typical Rise Time (ns)
19
Typical Turn-Off Delay Time (ns)
32
Typical Turn-On Delay Time (ns)
19
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Maximum Positive Gate Source Voltage (V)
20
Maximum Pulsed Drain Current @ TC=25°C (A)
0.6
Typical Gate Plateau Voltage (V)
6
Typical Reverse Recovery Time (ns)
1500
Maximum Diode Forward Voltage (V)
2
Mounting
表面贴装
Package Height
4.7(Max)
Package Width
9.4(Max)
Package Length
10.2(Max)
PCB changed
2
Tab
Tab
Supplier Package
TO-263ABVHV
包装
卷带
零件状态
活跃
引脚数量
3
配置
Single
信道型
N
IXTA02N250HV-TRL拓展信息
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