Littelfuse IXTA100N04T2

包装/外壳

TO-263-3

EU RoHS

Compliant

HTS

8541.29.00.95

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Process Technology

TrenchT2

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

100

Maximum Drain Source Resistance (mOhm)

7@10V

Typical Gate Charge @ Vgs (nC)

25.5@10V

Typical Gate Charge @ 10V (nC)

25.5

Typical Input Capacitance @ Vds (pF)

2690@25V

Maximum Power Dissipation (mW)

150000

Typical Fall Time (ns)

6.4

Typical Rise Time (ns)

5.2

Typical Turn-Off Delay Time (ns)

15.8

Typical Turn-On Delay Time (ns)

12

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

4.83(Max)

Package Width

9.65(Max)

Package Length

10.41(Max)

PCB changed

2

Tab

Tab

Supplier Package

D2PAK

Vds - Drain-Source Breakdown Voltage

40 V

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

150 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

25.5 nC

Rds On - Drain-Source Resistance

7 mOhms

Id - Continuous Drain Current

100 A

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N