Littelfuse IXTA160N10T

包装/外壳

TO-263-3

EU RoHS

Compliant

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Continuous Drain Current (A)

160

Maximum Drain Source Resistance (MOhm)

7@10V

Typical Gate Charge @ Vgs (nC)

132@10V

Typical Gate Charge @ 10V (nC)

132

Typical Input Capacitance @ Vds (pF)

6600@25V

Maximum Power Dissipation (mW)

430000

Typical Fall Time (ns)

42

Typical Rise Time (ns)

61

Typical Turn-Off Delay Time (ns)

49

Typical Turn-On Delay Time (ns)

33

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

4.7(Max)

Package Width

9.4(Max)

Package Length

10.41(Max)

PCB changed

2

Tab

Tab

Supplier Package

D2PAK

Vds - Drain-Source Breakdown Voltage

100 V

Pd - Power Dissipation

430 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Id - Continuous Drain Current

160 A

Rds On - Drain-Source Resistance

7 mOhms

系列

IXTA160N10

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N