Littelfuse IXTA180N10T7-TRL
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IXTA180N10T7-TRL
1475-IXTA180N10T7-TRL
晶体管 - FET,MOSFET - 阵列
TO-263-7
大陆
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IXTA180N10T7-TRL datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Littelfuse stock available at utmel
1最小包装量--
IXTA180N10T7-TRL详情
Littelfuse IXTA180N10T7-TRL重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-263-7
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
Unknown
PPAP
Unknown
Category
功率MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
100
Maximum Continuous Drain Current (A)
180
Maximum Drain Source Resistance (MOhm)
6.4@10V
Typical Gate Charge @ Vgs (nC)
151@10V
Typical Gate Charge @ 10V (nC)
151
Typical Input Capacitance @ Vds (pF)
6900@25V
Maximum Power Dissipation (mW)
480000
Typical Fall Time (ns)
31
Typical Rise Time (ns)
54
Typical Turn-Off Delay Time (ns)
42
Typical Turn-On Delay Time (ns)
33
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Mounting
表面贴装
Package Height
4.7(Max)
Package Width
9.4(Max)
Package Length
10.2(Max)
PCB changed
6
Tab
Tab
Supplier Package
D2PAK
Id - Continuous Drain Current
180 A
Rds On - Drain-Source Resistance
6.4 mOhms
Qg - Gate Charge
151 nC
Mounting Styles
SMD/SMT
Minimum Operating Temperature
- 55 C
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Maximum Operating Temperature
+ 175 C
Transistor Polarity
N-Channel
Pd - Power Dissipation
480 W
Vgs th - Gate-Source Threshold Voltage
2.5 V
Vds - Drain-Source Breakdown Voltage
100 V
包装
卷带
零件状态
活跃
技术
Si
引脚数量
7
配置
单一泉源
通道数量
1 Channel
信道型
N
IXTA180N10T7-TRL拓展信息
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