Littelfuse IXTA3N150HV-TRL

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1500

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

5

Maximum Continuous Drain Current (A)

3

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

10

Maximum Drain Source Resistance (MOhm)

7300@10V

Typical Gate Charge @ Vgs (nC)

38.6@10V

Typical Gate Charge @ 10V (nC)

38.6

Typical Input Capacitance @ Vds (pF)

1375@25V

Maximum Power Dissipation (mW)

250000

Typical Fall Time (ns)

25

Typical Rise Time (ns)

21

Typical Turn-Off Delay Time (ns)

42

Typical Turn-On Delay Time (ns)

19

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

4.7(Max)

Package Width

9.4(Max)

Package Length

10.2(Max)

PCB changed

2

Tab

Tab

Supplier Package

TO-263HV

Continuous Drain Current

3(A)

Drain-Source On-Volt

1500(V)

Operating Temperature Classification

Military

Package Type

TO-263HV

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±30(V)

Number of Elements

1

Rad Hardened

无

包装

卷带

零件状态

活跃

类型

功率MOSFET

引脚数量

3

极性

N

配置

Single

功率耗散

250(W)

信道型

N